Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers

Silicon nitride gate dielectrics and band gap engineering in graphene layers.

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account fo...

Visible photonic band gap engineering in silicon nitride waveguides

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the G-J direction. © 2000 American Inst...

Energy band-gap engineering of graphene nanoribbons.

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurem...

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

Thin ~equivalent oxide thickness Teq of 2.4 nm! silicon nitride layers were deposited on Si substrates by an atomic-layer-deposition ~ALD! technique at low temperatures ~,550 °C!. The interface state density at the ALD silicon nitride/Si-substrate interface was almost the same as that of the gate SiO2. No hysteresis was observed in the gate capacitance–gate voltage characteristics. The gate lea...

Graphene and Boron Nitride Single Layers